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| irf2807spbf irf2807lpbf hexfet ? power mosfet v dss = 75v r ds(on) = 13m ? i d = 82a s d g advanced hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieveextremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the d 2 pak is a surface mount power package capable of accommodating die sizes up to hex-4. it provides the highestpower capability and the lowest possible on-resistance in any existing surface mount package. the d 2 pak is suitable for high current applications because of its low internal connectionresistance and can dissipate up to 2.0w in a typical surface mount application. the through-hole version (irf2807l) is available for low- profile applications. advanced process technology ultra low on-resistance dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated lead-free description absolute maximum ratings parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 82 i d @ t c = 100c continuous drain current, v gs @ 10v 58 a i dm pulsed drain current 280 p d @t c = 25c power dissipation 230 w linear derating factor 1.5 w/c v gs gate-to-source voltage 20 v i ar avalanche current 43 a e ar repetitive avalanche energy 23 mj dv/dt peak diode recovery dv/dt 5.9 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew 10 lbfin (1.1nm) d 2 pak irf2807spbf to-262 irf2807lpbf www.irf.com 1 parameter typ. max. units r jc junction-to-case CCC 0.75 r ja junction-to-ambient (pcb mount)** CCC 40 thermal resistance c/w pd - 95945 downloaded from: http:///
2 www.irf.com s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source c urrent integral reverse (body diode) CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.2 v t j = 25c, i s = 43a, v gs = 0v t rr reverse recovery time CCC 100 150 ns t j = 25c, i f = 43a q rr reverse recovery charge CCC 410 610 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 82 280 starting t j = 25c, l = 370h r g = 25 ? , i as = 43a, v gs =10v (see figure 12) repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) i sd 43a di/d 300a/s, v dd v (br)dss , t j 175c pulse width 400s; duty cycle 2%. this is a typical value at device destruction and represents operation outside rated limits. this is a calculated value limited to t j = 175c . calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a.**when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994 parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 75 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.074 CCC v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance CCC CCC 13 m ? v gs = 10v, i d = 43a v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 38 CCC CCC s v ds = 50v, i d = 43a CCC CCC 25 a v ds = 75v, v gs = 0v CCC CCC 250 v ds = 60v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source reverse leakage CCC CCC -100 na v gs = -20v q g total gate charge CCC CCC 160 i d = 43a q gs gate-to-source charge CCC CCC 29 nc v ds = 60v q gd gate-to-drain ("miller") charge CCC CCC 55 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time CCC 13 CCC v dd = 38v t r rise time CCC 64 CCC i d = 43a t d(off) turn-off delay time CCC 49 CCC r g = 2.5 ? t f fall time CCC 48 CCC v gs = 10v, see fig. 10 between lead, CCC CCC 6mm (0.25in.)from package and center of die contact c iss input capacitance CCC 3820 CCC v gs = 0v c oss output capacitance CCC 610 CCC v ds = 25v c rss reverse transfer capacitance CCC 130 CCC pf ? = 1.0mhz, see fig. 5 e as single pulse avalanche energy CCC 1280 340 mj i as = 50a, l = 370h nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance CCC CCC s d g i gss ns i dss drain-to-source leakage current downloaded from: http:/// www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 10 100 1000 4.0 5.0 6.0 7.0 8.0 9.0 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 71a downloaded from: http:/// 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 40 80 120 160 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 43a v = 15v ds v = 37v ds v = 60v ds 0.1 1 10 100 1000 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 v ds , drain-to-source voltage (v) 0 1000 2000 3000 4000 5000 6000 7000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 1 10 100 1000 v ds , drain-tosource voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec downloaded from: http:/// www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 20 40 60 80 100 t , case temperature ( c) i , drain current (a) c d limited by package v ds 90%10% v gs t d(on) t r t d(off) t f 1 0.1 % + - downloaded from: http:/// 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - t p v (br)dss i as ! " #$ 25 50 75 100 125 150 175 0 100 200 300 400 500 600 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 18a 30a 43a r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs downloaded from: http:/// www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? ? ? !" % #! ! $ #"! !" ? $%& ? ' ( ? $%$ ) * # "+, % "( ! + +( #- &' %%% . +$*!$ / !!" for n-channel hexfet ? power mosfets downloaded from: http:/// 8 www.irf.com n ote: "p " in as s embly line pos ition indicates "l ead-f ree" f 530s t h is is an ir f 530s wit h lot code 8024 as s emb led on ww 02, 2000 in the assembly line "l" as s e mb l y lot code in t e r n at ion al rectifier logo part number date code ye ar 0 = 2000 week 02 line l f 530s a = as s e mb l y s it e co d e we e k 02 p = de s ignat e s l e ad-f r e e product (optional) r e ct if ie r int e r nat ional logo lot code assembly ye ar 0 = 2000 date code part number dimensions are shown in millimeters (inches) downloaded from: http:/// www.irf.com 9 to-262 part marking information to-262 package outline assembly lot code rectifier int e r n at ional as s e mb l e d on ww 19, 1997 n ote: "p " in as s embly line pos ition indicates "l ead-f ree" in the assembly line "c" logo t h is is an ir l 3103l lot code 1789 example: line c dat e code week 19 ye ar 7 = 1997 part number part number logo lot code assembly int e r n at ional rectifier product (optional) p = d e s ign at e s l e ad -f r e e a = assembly site code week 19 ye ar 7 = 1997 date code or downloaded from: http:/// 10 www.irf.com ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 01/05 data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on irs web site. 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. d 2 pak tape & reel infomation downloaded from: http:/// note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ downloaded from: http:/// |
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